Nitride Semiconductor Technology

Power Electronics and Optoelectronic Devices

Edited by Fabrizio Roccaforte Edited by Michael Leszczynski

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Extent: 464 pages

Publisher: Wiley-VCH

Language: English

Hardback (Published)

(September 2020)

ISBN: 9783527347100

6.69 x 9.61 inches

Price: $219.00

On back order

The book “Nitride Semiconductor Technology” provides an overview of nitride semiconductors and their uses in optoelectronics and power electronics devices. It explains the physical properties of those materials as well as their growth methods. Their applications in high electron mobility transistors, vertical power devices, LEDs, laser diodes, and vertical-cavity surface-emitting lasers are discussed in detail. The book further examines reliability issues in these materials and puts forward perspectives of integrating them with 2D materials for novel high-frequency and high-power devices.

 

In summary, it covers nitride semiconductor technology from materials to devices and provides the basis for further research.

 

Introduction to Gallium Nitride Properties and Applications
GaN-Based Materials: Substrates, Growth Methods and Quantum Well Properties
State of the Art of GaN-Based HEMTs for Mm-Wave Applications
Technologies for Normally-Off GaN HEMTs
Status and Perspectives of Vertical GaN Power Devices
Gallium Nitride Light Emitting Diodes
Nitride-Based Laser Diodes
Blue and Green Vertical-Cavity Surface-Emitting Lasers
Reliability Issues in GaN HEMTs and LEDs
Integration of GaN with 2D Materials for Novel High Frequency Devices

  • Edited by Fabrizio Roccaforte
  • Edited by Michael Leszczynski