Leakage Current and Defect Characterization of Short Channel MOSFETs

By (author) Guntrade Roll

Book cover: Leakage Current and Defect Characterization of Short Channel MOSFETs

Extent: 235 pages

Publisher: Logos Verlag Berlin

Subjects: Technical Sciences: Computer Science, Engineering, IT, & Math

Series: Research at NaMLab

Series volume number: 2

Language: English

Paperback (Published)

(November 2012)

ISBN: 9783832532611

5.71 x 8.27 inches

Price: $75.00

In stock

The continuous improvement in semiconductor technology requires field effect transistor scaling while maintaining acceptable leakage currents. This study analyzes the effect of scaling on the leakage current and defect distribution in peripheral DRAM transistors. The influence of important process changes, such as the high-k gate patterning and encapsulation as well as carbon co-implants in the source/drain junction are investigated by advanced electrical measurements and TCAD simulation. A complete model for the trap assisted leakage currents in the silicon bulk of the transistors is presented.

  • By (author) Guntrade Roll