Herstellung ultra-dunner hoch-varepsilon_rOxide und deren Verhalten unter dynamischen elektrischen Stressbedingungen

By (author) Steve Knebel

Image coming soon

Extent: 165, 165 pages

Publisher: Logos Verlag Berlin

Subjects: Technical Sciences: Computer Science, Engineering, IT, & Math

Series: Research at NaMLab

Series volume number: 6

Language: German

Paperback (Published)

(October 2019)

ISBN: 9783832549947

5.71 x 8.27 inches

Price: $75.00

Out of stock

Im Rahmen dieser Arbeit werden HfO_2und ZrO_2basierte hoch-varepsilon_rMaterialsysteme mit ihrer jeweiligen Anwendung als Gateoxid bzw. DRAM Isolalationsschicht untersucht. Es werden alternative dielektrische Schichten fur Speicherkondensatoren diskutiert und Alternativen zum ZrO_2/Al_2O_3/ZrO_2(ZAZ) Schichtstapel untersucht. Neben ZAZ, wurden Schichtstapel mit SrO oder Sc_2O_3Zwischenschicht abgeschieden und strukturell und elektrisch charakterisiert. Weiterhin wurden die abgeschiedenen Schichten hinsichtlich ihres dielektrischen Absorptionsverhalten sowie ihres Durchbruchsverhalten gepruft und verglichen. Ein weiterer Schwerpunkt ist das statische und dynamische Verhalten des zeitabhangigen dielektrischen Durchbruchs. Als Alternative zum DRAM Konzept wird die ferroelektrische Eigenschaft von dotierten HfO_2und dessen Einsatz als ferroelektrischer RAM vorgestellt. Bei diesem Konzept wird das paraelektrische Dielektrikum eines DRAMs durch das ferroelektrische Material ersetzt. Des Weiteren wurde im Rahmen dieser Arbeit HfO_2als hoch-varepsilon_rDielektrikum fur Transistoren mit metallischem Gate (HKMG) untersucht. Mittels temperaturabhangigen Leckstrommessungen wird der dominante Leistungsmechanismus untersucht. Wie im vorangegangenen Teil der Arbeit wird das dielektrische Absorptionsverhalten studiert. Auch fur HKMG Transistoren wird der zeitabhangige dielektrische Durchbruch bei alternierendem elektrischem Stress und die Rolle von Defekten in Form von Sauerstofffehlstellen beleuchtet.

  • By (author) Steve Knebel

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