High-mobility two-dimensional hole gases in III-V semiconductor heterostructures

growth and transport properties

by Marika Hirmer

Image coming soon

Extent: 144 pages

Publisher: Schnell & Steiner

Subjects: Technical Sciences: Computer Science, Engineering, IT, & Math

Series: Dissertationsreihe / Physik

Series volume number: 29

Language: German

Paperback (Published)

(February 2013)

ISBN: 9783868450958

6.65 x 9.45 inches

Price: $33.00

Out of stock

In this work, we investigated very high quality carbon-doped two-dimensional hole gases (2DHGs). The first part deal with high-mobility GaAs/AlGaAs quantum wells (QWs). Optimizing the heterostructure design, the hole mobility was extremely increased. Quantum Hall effect, photoconductivity effect, Rashba spin splitting, fractional quantum Hall effect (revealing interesting anisotropy in the thermally activated transport) and the band structure were investigated. In the second part, we studied InAs/InGaAs/InAlAs QWs with high spin-orbit coupling. A great success was the preparation of a carbon p-type doping in QWs with high indium content. A conductivity type inversion from p- to n-type with changing composition was observed. The heterostructures exhibit weak-antilocalization, hole-hole interaction effect and strong transport anisotropy. The spin splitting can be engineered providing small changes in the structure design. Both topics are of major interest for spintronics research.

  • By (author) Marika Hirmer

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