Spin injection into GaAs

by Bernhard Endres

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Extent: 126 pages

Publisher: Schnell & Steiner

Subjects: Technical Sciences: Computer Science, Engineering, IT, & Math

Series: Dissertationsreihe / Physik

Series volume number: 34

Language: German

Paperback (Published)

(August 2013)

ISBN: 9783868451023

6.65 x 9.45 inches

Price: $50.00

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In this work spin injection into GaAs from Fe and (Ga,Mn)As was investigated. For the realization of any spintronic device the detailed knowledge about the spin lifetime, the spatial distribution of spin-polarized carriers and the influence of electric fields is essential. In the present work all these aspects have been analyzed by optical measurements of the polar magneto-optic Kerr effect (pMOKE) at the cleaved edge of the samples. Besides the attempt to observe spin pumping and thermal spin injection into n-GaAs the spin solar cell effect is demonstrated, a novel mechanism for the optical generation of spins in semiconductors with potential for future spintronic applications. Also important for spin-based devices as transistors is the presented realization of electrical spin injection into a two-dimensional electron gas.

  • By (author) Bernhard Endres

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